Nanopatterning of fluorinated graphene by electron beam irradiation.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 21851114.
- Also identified by DOI 10.1021/nl2020697.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We demonstrate the possibility to selectively reduce insulating fluorinated graphene to conducting and semiconducting graphene by electron beam irradiation. Electron-irradiated fluorinated graphene microstructures show 7 orders of magnitude decrease in resistivity (from 1 TΩ to 100 kΩ), whereas nanostructures show a transport gap in the source-drain bias voltage. In this transport gap, electrons are localized, and charge transport is dominated by variable range hopping. Our findings demonstrate a step forward to all-graphene transparent and flexible electronics.