Atomic force microscopy based tunable local anodic oxidation of graphene.
basic_science · Level V
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- Record sourced from PubMed, PMID 21939271.
- Also identified by DOI 10.1021/nl201448q.
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Abstract
We have fabricated graphene/graphene oxide/graphene (G/GO/G) junctions by local anodic oxidation lithography using atomic force microscopy (AFM). The conductance of the G/GO/G junction decreased with the bias voltage applied to the AFM cantilever V(tip). For G/GO/G junctions fabricated with large and small |V(tip)|. GO was semi-insulating and semiconducting, respectively. AFM-based LAO lithography can be used to locally oxidize graphene with various oxidation levels and achieve tunability from semiconducting to semi-insulating GO.
Medical subject headings
- Crystallization
- Electroplating
- Graphite
- Microscopy, Atomic Force
- Nanostructures