Strain-mediated phase control and electrolyte-gating of electron-doped manganites.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22105844.
- Also identified by DOI 10.1002/adma.201102968.
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Abstract
A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.
Medical subject headings
- Manganese Compounds