Room-temperature quantum confinement effects in transport properties of ultrathin Si nanowire field-effect transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 22112200.
- Also identified by DOI 10.1021/nl203238e.
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Abstract
Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices.