Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch(-2).

Xu, Ji; Hong, Sung Woo; Gu, Weiyin; Lee, Kim Y; Kuo, David S; Xiao, Shuaigang; Russell, Thomas P · Adv Mater · 2011

basic_science · Level V

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Abstract

The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .

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