Multilevel data storage memory using deterministic polarization control.

Lee, Daesu; Yang, Sang Mo; Kim, Tae Heon; Jeon, Byung Chul; Kim, Yong Su; Yoon, Jong-Gul; Lee, Ho Nyung; Baek, Seung Hyup et al. · Adv Mater · 2012

basic_science · Level V

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Abstract

Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.

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