Topological insulator quantum dot with tunable barriers.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22181853.
- Also identified by DOI 10.1021/nl203851g.
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Abstract
Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.
Medical subject headings
- Quantum Dots
- Semiconductors