Room temperature electrical manipulation of giant magnetoresistance in spin valves exchange-biased with BiFeO3.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22268723.
- Also identified by DOI 10.1021/nl202537y.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Magnetoelectric multiferroics are attractive materials for the development of low-power electrically controlled spintronic devices. Here we report the optimization of the exchange bias as well as the giant magnetoresistance effect (GMR) of spin valves deposited on top of BiFeO(3)-based heterostructures. We show that the exchange bias can be electrically controlled through a change in the relative proportion of 109° domain walls and propose solutions toward a reversible process.
Medical subject headings
- Bismuth
- Ferric Compounds
- Magnetics
- Nanostructures