Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22278999.
- Also identified by DOI 10.1002/adma.201103513.
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Abstract
The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.
Medical subject headings
- Light
- Transistors, Electronic