Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22316380.
- Also identified by DOI 10.1021/nl204234j.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We report a direct observation of surface dominated conduction in an intrinsic Bi(2)Se(3) thin film with a thickness of six quintuple layers grown on lattice-matched CdS (0001) substrates by molecular beam epitaxy. Shubnikov-de Haas oscillations from the topological surface states suggest that the Fermi level falls inside the bulk band gap and is 53 ± 5 meV above the Dirac point, which is in agreement with 70 ± 20 meV obtained from scanning tunneling spectroscopies. Our results demonstrate a great potential of producing genuine topological insulator devices using Dirac Fermions of the surface states, when the film thickness is pushed to nanometer range.
Medical subject headings
- Bismuth
- Membranes, Artificial
- Nanostructures
- Selenium