Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001).
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22324998.
- Also identified by DOI 10.1021/nl2042497.
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Abstract
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.
Medical subject headings
- Carbon Compounds, Inorganic
- Crystallization
- Graphite
- Nanostructures
- Silicon Compounds