Direct observations of retention failure in ferroelectric memories.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22331626.
- Also identified by DOI 10.1002/adma.201103983.
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Abstract
Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswitching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.
Medical subject headings
- Electrical Equipment and Supplies