Regenerable resistive switching in silicon oxide based nanojunctions.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22362565.
- Also identified by DOI 10.1002/adma.201104301.
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Abstract
A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.
Medical subject headings
- Electrical Equipment and Supplies
- Nanostructures
- Silicon Dioxide