A graphite-like zero gap semiconductor with an interlayer separation of 2.8 Å.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22362606.
- Also identified by DOI 10.1002/adma.201104717.
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Abstract
The synthesis of a highly crystalline graphite-like new material with an interlayer separation of 2.8 Å is demonstrated by re-stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.
Medical subject headings
- Graphite
- Semiconductors