Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 22364321.
- Also identified by DOI 10.1021/nl204301h.
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Abstract
The self-assembly of Ge(1)Sb(2)Te(4) nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, catalyzed by Au nanoislands in a narrow range of temperatures and deposition pressures. In the optimized conditions of 400 °C, 50 mbar, the NWs are Ge(1)Sb(2)Te(4) single hexagonal crystals. Phase change memory switching was reversibly induced by nanosecond current pulses through metal-contacted NWs with threshold voltage of about 1.35 V.
Medical subject headings
- Crystallization
- Gases
- Metals
- Nanostructures
- Organic Chemicals