Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry.

Liao, Zhi-Min; Wu, Han-Chun; Kumar, Shishir; Duesberg, Georg S; Zhou, Yang-Bo; Cross, Graham L W; Shvets, Igor V; Yu, Da-Peng · Adv Mater · 2012

basic_science · Level V

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Abstract

A large magnetoresistance (MR) effect of few-layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane is studied. A non-saturation and anisotropic MR with the value over 60% at 14 T is observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

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