Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22414204.
- Also identified by DOI 10.1021/nn204838m.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.