Controlling bulk conductivity in topological insulators: key role of anti-site defects.
basic_science · Level V
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- Record sourced from PubMed, PMID 22430985.
- Also identified by DOI 10.1002/adma.201200187.
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Abstract
Intrinsic topological insulators are realized by alloying Bi(2)Te(3) with Bi(2)Se(3). Angle-resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First-principles calculations of the native defect landscape highlight the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
Medical subject headings
- Alloys
- Bismuth
- Selenium
- Tellurium