Understanding charge transfer at PbS-decorated graphene surfaces toward a tunable photosensor.

Zhang, Dayong; Gan, Lin; Cao, Yang; Wang, Qing; Qi, Limin; Guo, Xuefeng · Adv Mater · 2012

basic_science · Level V

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Abstract

An intrinsic mechanism of photoinduced hole transfer reactions occurring at the grapheme-PbS interface is described with the purpose of building a tunable photosensor with a responsivity of more than 10(3) A W(-1) . It is remarkable that rational utilization of this finding also realizes symmetric, opposing photoswitching effects, which are effectively mirror images, in a single pristine graphene device. These results highlight the vital importance of interface modification as a powerful tool for creating future ultrasensitive optoelectronic devices.

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