Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22528823.
- Also identified by DOI 10.1002/adma.201104669.
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Abstract
Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.
Medical subject headings
- Semiconductors
- Titanium
- Vanadium Compounds