Piezotronic effect on the transport properties of GaN nanobelts for active flexible electronics.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22544827.
- Also identified by DOI 10.1002/adma.201201020.
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Abstract
The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon.
Medical subject headings
- Electrical Equipment and Supplies
- Gallium
- Mechanical Phenomena
- Nanostructures