Electron transport in SiGe alloy nanowires in the ballistic regime from first-principles.

Amato, Michele; Ossicini, Stefano; Rurali, Riccardo · Nano Lett · 2012

basic_science · Level V

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Abstract

Silicon-germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.

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