Achieving high field-effect mobility in amorphous indium-gallium-zinc oxide by capping a strong reduction layer.
basic_science · Level V
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- Record sourced from PubMed, PMID 22678659.
- Also identified by DOI 10.1002/adma.201200683.
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Abstract
An effective approach to reduce defects and increase electron mobility in a-IGZO thin-film transistors (a-IGZO TFTs) is introduced. A strong reduction layer, calcium, is capped onto the back interface of a-IGZO TFT. After calcium capping, the effective electron mobility of a-IGZO TFT increases from 12 cm(2) V(-1) s(-1) to 160 cm(2) V(-1) s(-1). This high mobility is a new record, which implies that the proposed defect reduction effect is key to improve electron transport in oxide semiconductor materials.
Medical subject headings
- Gallium
- Indium
- Transistors, Electronic
- Zinc Oxide