GaS and GaSe ultrathin layer transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22678832.
- Also identified by DOI 10.1002/adma.201201361.
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Abstract
Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.
Medical subject headings
- Gallium
- Selenium
- Sulfides
- Transistors, Electronic