Resistive switching and magnetic modulation in cobalt-doped ZnO.

Chen, Guang; Song, Cheng; Chen, Chao; Gao, Shuang; Zeng, Fei; Pan, Feng · Adv Mater · 2012

basic_science · Level V

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Abstract

A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.

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