Evidence for a spontaneous gapped state in ultraclean bilayer graphene.

Bao, Wenzhong; Velasco, Jairo; Zhang, Fan; Jing, Lei; Standley, Brian; Smirnov, Dmitry; Bockrath, Marc; MacDonald, Allan H et al. · Proc Natl Acad Sci U S A · 2012

basic_science · Level V

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Abstract

At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single-and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although σ(min) is often approximately 2-3 e(2)/h (where e is the electron charge and h is Planck's constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T(c) of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.

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