DNA interlayers enhance charge injection in organic field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22718359.
- Also identified by DOI 10.1002/adma.201201248.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
By inserting DNA interlayers beneath the Au contact, the contact resistance of PC(70) BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V.
Medical subject headings
- DNA
- Fullerenes
- Transistors, Electronic