Low-resistivity 10 nm diameter magnetic sensors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22783942.
- Also identified by DOI 10.1021/nl301610z.
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Abstract
Resistivities of 5.4 μΩ·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 Ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.