High carrier mobility in single ultrathin colloidal lead selenide nanowire field effect transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 22823181.
- Also identified by DOI 10.1021/nl302161n.
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Abstract
Ultrathin colloidal lead selenide (PbSe) nanowires with continuous charge transport channels and tunable bandgap provide potential building blocks for solar cells and photodetectors. Here, we demonstrate a room-temperature hole mobility as high as 490 cm(2)/(V s) in field effect transistors incorporating single colloidal PbSe nanowires with diameters of 6-15 nm, coated with ammonium thiocyanate and a thin SiO(2) layer. A long carrier diffusion length of 4.5 μm is obtained from scanning photocurrent microscopy (SPCM). The mobility is increased further at lower temperature, reaching 740 cm(2)/(V s) at 139 K.