Diameter-dependent or independent: toward a mechanistic understanding of the vapor-liquid-solid Si nanowire growth rate.

Abstract

Si nanowires have received continued increased attention because they keep the promise of monolithic integration of high-performance semiconductors with new functionality into existing silicon technology. Most Si nanowires are grown by vapor-liquid-solid mechanism, and despite many years of study, this growth mechanism remains under lively debate. For instance, contradictory results have been reported on the effect of diameter size on nanowire growth rate. Here, we developed a universal kinetic model of Si nanowire growth based on surface diffusion which takes into account adatom diffusion from the sidewall and substrate surface into the liquid droplet as well as the Gibbs-Thomson effect. Our analysis shows that the diameter independence for Si nanowires is affected by the interplay between the Gibbs-Thomson effect and the surface diffusion, whereas the diameter dependence is mainly influenced by the Gibbs-Thomson effect. The results based on the proposed model are in good agreement with experimental data.