Angle-dependent carrier transmission in graphene p-n junctions.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22873738.
- Also identified by DOI 10.1021/nl3011897.
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Abstract
Angle-dependent carrier transmission probability in graphene p-n junctions is investigated. Using electrostatic doping from buried gates, p-n junctions are formed along graphene channels that are patterned to form different angles with the junction. A peak in the junction resistance is observed, which becomes pronounced with angle. This angular dependence is observed for junctions made on both exfoliated and CVD-grown graphene and is consistent with the theoretically predicted dependence of transmission probability on incidence angle.
Medical subject headings
- Microelectrodes
- Nanostructures
- Semiconductors