Highly air-stable phosphorus-doped n-type graphene field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22886822.
- Also identified by DOI 10.1002/adma.201202255.
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Abstract
Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.
Medical subject headings
- Graphite
- Phosphorus
- Transistors, Electronic