High density and large area arrays of silicon oxide pillars with tunable domain size for mask etch applications.

Abstract

Silicon oxide pillars with tunable feature sizes and pitches are fabricated based on a block copolymer self-assembly template. By using reactive ion etching (RIE), the feature size of the silicon oxide pillars can be tuned without affecting the pitch. Using BCP with a different molecular weight can change the pitch size of the silicon oxide pillars. An area density of up to 2 teradots/inch(2) is achieved.