Flexible non-volatile ferroelectric polymer memory with gate-controlled multilevel operation.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22887686.
- Also identified by DOI 10.1002/adma.201201831.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.
Medical subject headings
- Computer Storage Devices
- Nanotechnology
- Organoselenium Compounds
- Polyvinyls
- Signal Processing, Computer-Assisted
- Transistors, Electronic