Hopping conduction in Mn ion-implanted GaAs nanowires.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22889471.
- Also identified by DOI 10.1021/nl302318f.
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Abstract
We report on temperature-dependent charge transport in heavily doped Mn(+)-implanted GaAs nanowires. The results clearly demonstrate that the transport is governed by temperature-dependent hopping processes, with a crossover between nearest neighbor hopping and Mott variable range hopping at about 180 K. From detailed analysis, we have extracted characteristic hopping energies and corresponding hopping lengths. At low temperatures, a strongly nonlinear conductivity is observed which reflects a modified hopping process driven by the high electric field at large bias.
Medical subject headings
- Arsenicals
- Gallium
- Manganese
- Nanostructures