High-detectivity multilayer MoS(2) phototransistors with spectral response from ultraviolet to infrared.

Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha; Lee, Jong Hak; Cha, Gi-Beom; Hong, Soon Cheol; Kim, Sangsig; Kim, Jeongyong et al. · Adv Mater · 2012

basic_science · Level V

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Abstract

Phototransistors based on multilayer MoS(2) crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS(2) phototransistors. Multilayer MoS(2) phototransistors further exhibit high room temperature mobilities (>70 cm(2) V(-1) s(-1) ), near-ideal subthreshold swings (~70 mV decade(-1) ), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.

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