High aspect ratio sub-15 nm silicon trenches from block copolymer templates.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 22903820.
- Also identified by DOI 10.1002/adma.201202361.
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Abstract
High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.
Medical subject headings
- Nanopores
- Polymers
- Silicon