Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 22924866.
- Also identified by DOI 10.1021/nl301898m.
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Abstract
The first noncontact photoconductivity measurements of gallium nitride nanowires (NWs) are presented, revealing a high crystallographic and optoelectronic quality achieved by use of catalyst-free molecular beam epitaxy. In comparison with bulk material, the NWs exhibit a long conductivity lifetime (>2 ns) and a high mobility (820 ± 120 cm(2)/(V s)). This is due to the weak influence of surface traps with respect to other III-V semiconducting NWs and to the favorable crystalline structure of the NWs achieved via strain-relieved growth.
Medical subject headings
- Gallium
- Materials Testing
- Nanotubes