Mid-infrared HgTe/As2S3 field effect transistors and photodetectors.
basic_science · Level V
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- Record sourced from PubMed, PMID 23027629.
- Also identified by DOI 10.1002/adma.201203012.
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Abstract
HgTe colloidal quantum dots (CQD) in an inorganic As(2)S(3) matrix allow 100-fold higher mobility with optimized transport properties compared to HgTe-organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid-IR photoconductors are discussed.