Controlled ambipolar doping and gate voltage dependent carrier diffusion length in lead sulfide nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 23066756.
- Also identified by DOI 10.1021/nl303294k.
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Abstract
We report a simple, controlled doping method for achieving n-type, intrinsic, and p-type lead sulfide (PbS) nanowires (NWs) grown by chemical vapor deposition without introducing any impurities. A wide range of carrier concentrations is realized by adjusting the ratio between the Pb and S precursors. The field effect electron mobility of n-type PbS NWs is up to 660 cm(2)/(V s) at room temperature, in agreement with a long minority carrier diffusion length measured by scanning photocurrent microscopy (SPCM). Interestingly, we have observed a strong dependence of minority carrier diffusion length on gate voltage, which can be understood by considering a carrier concentration dependent recombination lifetime. The demonstrated ambipolar doping of high quality PbS NWs opens up exciting avenues for their applications in photodetectors and photovoltaics.