Enhanced charge carrier mobility in two-dimensional high dielectric molybdenum oxide.
basic_science · Level V
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- Record sourced from PubMed, PMID 23090760.
- Also identified by DOI 10.1002/adma.201203346.
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Abstract
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO(3) can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO(3) of ∼11 nm thickness and carrier mobilities larger than 1100 cm(2) V(-1) s(-1) are obtained.