Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23108727.
- Also identified by DOI 10.1002/adma.201202597.
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Abstract
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.
Medical subject headings
- Amplifiers, Electronic
- Arsenicals
- Gallium
- Indium
- Semiconductors