Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates.
basic_science · Level V
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- Record sourced from PubMed, PMID 23161470.
- Also identified by DOI 10.1002/adma.201202973.
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Abstract
By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.