Substituent variation drives metal/monolayer/semiconductor junctions from strongly rectifying to ohmic behavior.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 23161521.
- Also identified by DOI 10.1002/adma.201203028.
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Abstract
An eight-orders of magnitude enhancement in current across Hg/X-styrene-Si junctions is caused by merely altering a substituent, X. Interface states are passivated and, depending on X, the Si Schottky junction encompasses the full range from Ohmic to strongly rectifying. This powerful electrostatic molecular effect has immediate implications for interface band alignment and sensing.
Medical subject headings
- Electrodes
- Mercury
- Semiconductors
- Styrenes