Rolled-up nanomembranes as compact 3D architectures for field effect transistors and fluidic sensing applications.
basic_science · Level V
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- Record sourced from PubMed, PMID 23245385.
- Also identified by DOI 10.1021/nl303887b.
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Abstract
We fabricate inorganic thin film transistors with bending radii of less than 5 μm maintaining their high electronic performance with on-off ratios of more than 10(5) and subthreshold swings of 160 mV/dec. The fabrication technology relies on the roll-up of highly strained semiconducting nanomembranes, which compacts planar transistors into three-dimensional tubular architectures opening intriguing potential for microfluidic applications. Our technique probes the ultimate limit for the bending radius of high performance thin film transistors.