Anisotropic formation and distribution of stacking faults in II-VI semiconductor nanorods.
basic_science · Level V
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- Record sourced from PubMed, PMID 23252712.
- Also identified by DOI 10.1021/nl3036417.
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Abstract
Nanocrystals of cadmium selenide exhibit a form of polytypism with stable forms in both the wurtzite and zinc blende crystal structures. As a result, wurtzite nanorods of cadmium selenide tend to form stacking faults of zinc blende along the c-axis. These faults were found to preferentially form during the growth of the (001) face, which accounts for 40% of the rod's total length. Since II-VI semiconductor nanorods lack inversion symmetry along the c-axis of the particle, the two ends of the nanorod may be identified by this anisotropic distribution of faults.