Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 23280854.
- Also identified by DOI 10.1002/adma.201202758.
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Abstract
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.
Medical subject headings
- Thiocyanates
- Transistors, Electronic