Anomalous high mobility in LaAlO3/SrTiO3 nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 23305110.
- Also identified by DOI 10.1021/nl3033729.
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Abstract
Nanoscale control of the metal-insulator transition at the interface between LaAlO(3) and SrTiO(3) provides a pathway for reconfigurable, oxide-based nanoelectronics. Four-terminal transport measurements of LaAlO(3)/SrTiO(3) nanowires at room temperature (T = 300 K) reveal an equivalent 2D Hall mobility greatly surpassing that of bulk SrTiO(3) and approaching that of n-type Si nanowires of comparable dimensions. This large enhancement of mobility is relevant for room-temperature device applications.