Anisotropic topological surface states on high-index Bi2Se3 films.
basic_science · Level V
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- Record sourced from PubMed, PMID 23341331.
- Also identified by DOI 10.1002/adma.201202936.
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Abstract
A high-index topological insulator thin film, Bi2 Se3 (221), is grown on a faceted InP(001) substrate by molecular-beam epitaxy (see model in figure (a)). Angle-resolved photoemission spectroscopy measurement reveals the Dirac cone structure of the surface states on such a surface (figure (b)). The Fermi surface is elliptical (figure (c)), suggesting an anisotropy along different crystallographic directions. Transport studies also reveal a strong anisotropy in Hall conductance.