Organic vapor passivation of silicon at room temperature.
basic_science · Level V
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- Record sourced from PubMed, PMID 23355317.
- Also identified by DOI 10.1002/adma.201204382.
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Abstract
A simple, inexpensive, efficient, and scalable method to create air-stable organic surface passivation layers on silicon using a vapor-phase treatment is demonstrated. A variant of initiated chemical vapor deposition is used to synthesize a thin film that acts as both a passivation layer and an antireflective coating. The lowest surface recombination velocity reported to date is achieved and maintained during prolonged exposure to air.